{ { { ? { { { ? absolute maximum ratings symbol parameter value units v dss drain to source voltage 30 v i d continuous drain current(@t c = 25 c) (note 6) 95 a continuous drain current(@t c = 100 c) 67.3 a i dm drain current pulsed (note 1) 380 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 450 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d total power dissipation(@t c = 25 c) 150 w derating factor above 25 c 1.0 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 175 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 1.0 c/w r cs thermal resistance, case to sink - 0.5 - c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w SFP95N03L september, 2002. rev. 0. 1/7 features low r ds (on) (0.0085 ? )@v gs =10v low gate charge (typical 39nc) low crss (typical 185pf) improved dv/dt capability 100% avalanche tested maximum junction temperature range (175c) general description this power mosfet is produced using semiwell?s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior sw itching performance, and rugged avalanche characteristics. this power mosfet is well suited for synchronous dc-dc converters and power management in portable and battery operated products. logic n-channel mosfet semiwell semiconductor symbol 2. drain 3. source 1. gate preliminary copyright@semiwell semiconductor co., ltd., all rights reserved. to-220 1 2 3
SFP95N03L electrical char acteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 30 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c - 0.023 - v/c i dss drain-source leakage current v ds = 30v, v gs = 0v --1ua v ds = 24v, t c = 150 c --10ua i gss gate-source leakage, forward v gs = 20v, v ds = 0v --100na gate-source leakage, reverse v gs = -20v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 1.0 - 3.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 47.5a v gs =5 v, i d = 47.5a - - 0.0065 0.0085 0.0085 0.0115 ? dynamic characteristics c iss input capacitance v gs =0 v, v ds =25v, f = 1mhz - 1015 1320 pf c oss output capacitance - 845 1110 c rss reverse transfer capacitance - 185 240 dynamic characteristics t d(on) turn-on delay time v dd =15v, i d =95a, r g =50 ? see fig. 13. (note 4, 5) -45100 ns t r rise time - 165 340 t d(off) turn-off delay time - 70 150 t f fall time - 140 290 q g total gate charge v ds =24v, v gs =5v, i d =95a see fig. 12. (note 4, 5) -3951 nc q gs gate-source charge - 13 - q gd gate-drain charge(miller charge) - 18 - source-drain diode rati ngs and characteristics symbol parameter test cond itions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --95 a i sm pulsed source current - - 380 v sd diode forward voltage i s =95a, v gs =0v - - 1.5 v t rr reverse recovery time i s =95a,v gs =0v,di f /dt=100a/us -55-ns q rr reverse recovery charge - 65 - nc notes 1. repeativity rating : pulse width limited by junction temperature 2. l = 50 uh, i as =95a, v dd = 15v, r g = 0 ? , starting t j = 25c 3. isd 95a, di/dt 300a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. 6. continuous drain current calculated by maxi mum junction temperature ; limited by package 2/7 copyright@semiwell semiconductor co., ltd., all rights reserved.
0 5 10 15 20 25 30 35 0 1000 2000 3000 4000 5000 6000 c rss c oss c iss notes : 1. v gs = 0v 2. f=1mhz c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 2 4 6 8 10 12 v ds = 15v v ds = 24v note : i d = 95 a v gs , gate-source voltage [v] q g , total gate charge [nc] 024681012 10 -1 10 0 10 1 10 2 175 o c 25 o c -55 o c notes : 1. v ds = 15v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current[a] v sd , source-drain voltage[v] 0 100 200 300 400 0 5 10 15 20 v gs = 10v v gs = 5v note : t j = 25 r ds(on) [m ? ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 10 1 10 2 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 3/7 fig 3. on resistance variation vs. drain current and gate voltage fig 4. on state current vs. allowable case temperature fig 6. gate charge characteristics SFP95N03L fig 1. on-state characteristics fig 2. transfer characteristics copyright@semiwell semiconductor co., ltd., all rights reserved. fig 5. capacitance characteristics
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 1.0 /w max. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 175 0 20 40 60 80 100 limited by package i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 47.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] fig 9. maximum safe operating area fig 10. maximum drain current vs. case temperature fig 11. transient thermal response curve fig 7. breakdown voltage variatio n fig 8. on-resistance variation SFP95N03L 4/7 copyright@semiwell semiconductor co., ltd., all rights reserved.
charge v gs 5v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs v q g q gs q gd charge v gs v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 5v q g q gs q gd charge v gs 5v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs v q g q gs q gd charge v gs v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut 5/7 fig 13. switching time test circuit & waveforms fig 14. unclamped inductive swit ching test circuit & waveforms SFP95N03L fig. 12. gate charge test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss e as =l l i as 2 ---- 2 1 e as =l l i as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -- v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d copyright@semiwell semiconductor co., ltd., all rights reserved. v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) 5v v ds r l dut pulse generator v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) v v ds r l dut pulse generator r g v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) 5v v ds r l dut pulse generator v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) v v ds r l dut pulse generator r g
SFP95N03L dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l l i s i s fig. 15. peak diode recovery dv/dt test circuit & waveforms 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- 6/7 copyright@semiwell semiconductor co., ltd., all rights reserved.
dim. mm inch min. typ. max. min. typ. max. a 9.7 10.1 0.382 0.398 b 6.3 6.7 0.248 0.264 c 9.0 9.47 0.354 0.373 d 12.8 13.3 0.504 0.524 e 1.2 1.4 0.047 0.055 f 1.7 0.067 g 2.5 0.098 h 3.0 3.4 0.118 0.134 i 1.25 1.4 0.049 0.055 j 2.4 2.7 0.094 0.106 k 5.0 5.15 0.197 0.203 l 2.2 2.6 0.087 0.102 m 1.42 1.62 0.056 0.064 n 0.45 0.6 0.018 0.024 o 1.17 1.37 0.046 0.054 ? 3.6 0.142 7/7 to-220 package dimension SFP95N03L 1. gate 2. drain 3. source a b c i g l 1 m e f h k n o 2 3 j d copyright@semiwell semiconductor co., ltd., all rights reserved.
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